Equipment Name

HJT In-line PECVD

Equipment Model

PD-1022/UD

Equipment Application

Fabrication of intrinsic and doped amorphous silicon films.

Processes

Ionized precursor gases deposit thin films on a substrate.

Features

· Quick RF ignition with least reflect power for uniform and stable film deposition.

· Matured and stable multi-feed in RF technology compatible for even large process chamber.

· Continuous adjustable gas between diffuser and substrate providing flexible process possibilities.

· High throughput with relative low cost, with capability of customized product design.

· Modularized design for easy installation and maintenance, together with highest safety protocol from design to fabrication.

Parameters